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參數資料
| 型號： | IRF1104 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 40V的，的Rds（on）\u003d 0.009ohm，身份證\u003d 100號A） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 101K |
| 代理商： | IRF1104 |
IRF1104
PRELIMINARY
HEXFET
Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
D
G
Parameter
Max.
100
71
400
170
1.11
± 20
350
60
17
5.0
-55 to + 175
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
0.50
–––
Max.
0.90
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 0.009
I
D
= 100A
TO-220AB
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
4/24/98
1
PD- 9.1724A
相關PDF資料 |
PDF描述 |
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| IRF1104SPBF | HEXFET Power MOSFET |
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| IRF130 | TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF1104HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 40V 100A 3-Pin(3+Tab) TO-220AB |
| IRF1104L | 功能描述:MOSFET N-CH 40V 100A TO-262 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF1104LPBF | 制造商:International Rectifier 功能描述:MOSFET, 40V, 100A, 9 MOHM, 62 NC QG, TO-262 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 40V 100A 3PIN TO-262 - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N-Channel 40V 100A TO262 |
| IRF1104PBF | 功能描述:MOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF1104S | 功能描述:MOSFET N-CH 40V 100A D2PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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