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參數資料
| 型號： | IRF1104PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009ヘ , ID = 100A ) |
| 中文描述： | HEXFET功率MOSFET（減振鋼板基本\u003d 40V的，的RDS（on）\u003d 0.009ヘ，身份證\u003d 100號A） |
| 文件頁數： | 1/9頁 |
| 文件大小： | 193K |
| 代理商： | IRF1104PBF |
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
D
G
Parameter
Max.
100
71
400
170
1.11
± 20
350
60
17
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Parameter
Typ.
–––
0.50
–––
Max.
0.90
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 0.009
I
D
= 100A
TO-220AB
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
02/02/04
1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF1104S | 功能描述:MOSFET N-CH 40V 100A D2PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF1104SHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK |
| IRF1104SPBF | 制造商:International Rectifier 功能描述:MOSFET, 40V, 100A, 9 MOHM, 62 NC QG, D2-PAK 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 40V 100A 3PIN D2PAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N-Channel 40V 100A D2PAK |
| IRF1104STRL | 功能描述:MOSFET N-CH 40V 100A D2PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF1104STRLPBF | 制造商:International Rectifier 功能描述:MOSFET, 40V, 100A, 9 MOHM, 62 NC QG, D2-PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 40V 100A 3PIN D2PAK - Tape and Reel |
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