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參數資料
| 型號： | IRF130 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Power MOSFETs, 20 A, 60-100 V |
| 中文描述： | N溝道功率MOSFET，20甲，60-100 V |
| 文件頁數： | 1/7頁 |
| 文件大小： | 147K |
| 代理商： | IRF130 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS =0V, TC = 25°C
ID @ VGS = 0V, TC = 100°C
IDM
PD @ TC = 25°C
14
9.0
56
75
0.60
±20
75
14
7.5
5.5
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
11.5(typical)
g
PD - 90333F
The HEXFET
technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
o
C
A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
THRU-HOLE (TO-204AA/AE)
100V, N-CHANNEL
JANTX2N6756
JANTXV2N6756
TRANSISTORS
[REF:MIL-PRF-19500/542]
01/22/01
www.irf.com
1
TO-3
Product Summary
Part Number BVDSS R
DS(on)
IRF130 100V 0.18
14
A
I
D
Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
For footnotes refer to the last page
IRF130
相關PDF資料 |
PDF描述 |
|---|---|
| IRF130SMD | N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
| IRF130 | N-CHANNEL POWER MOSFET |
| IRF1310NPBF | HEXFET POWER MOSFET |
| IRF1312STRL | TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 95A I(D) | TO-263AB |
| IRF1312 | HEXFET Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF130-133 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 20 A, 60-100 V |
| IRF1302 | 制造商:International Rectifier 功能描述:MOSFET, Transistor Polarity:N Channel, Power Dissipation Pd:230W, Current Rating |
| IRF1302L | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) |
| IRF1302PBF | 制造商:International Rectifier 功能描述:MOSFET N 20V 180A TO-220 |
| IRF1302S | 功能描述:MOSFET N-CH 20V 174A D2PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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