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參數資料
| 型號： | IRF1310NSTRL |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 42A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 42A條（?。﹟對263AB |
| 文件頁數： | 2/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | IRF1310NSTRL |
IRF130SMD05
N
IRFN130SMD05
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukPrelim. 10/00
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
3
15V
V
GS
= 0
I
D
= 1mA
I
D
= 7A
I
D
= 11A
I
D
= 250
m
A
I
DS
= 7A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= 11A
V
DS
= 0.5BV
DSS
I
D
= 11A
V
DD
= 50V
I
D
= 11A
R
G
= 7.5
W
I
S
= 11A
V
GS
= 0
I
S
= 11A
d
i
/ d
t
￡
100A/
m
s V
DD
￡
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
100
0.1
0.19
0.22
4
2
3
25
250
100
-100
650
240
44
12.8
28.5
1.0
3.8
6.3
16.6
30
75
40
45
11
43
1.5
300
3
8.7
8.7
V
V/°C
W
V
S
(
(
W
)
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
Internal Source Inductance
(from 6mm down source lead to centre of source bond pad)
(from 6mm down drain lead pad to centre of die)
PACKAGE CHARACTERISTICS
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相關代理商/技術參數 |
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| IRF1310NSTRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 42A 3PIN D2PAK - Tape and Reel |
| IRF1310NSTRLPBF | 功能描述:MOSFET MOSFT 100V 42A 36mOhm 73.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF1310NSTRR | 功能描述:MOSFET N-CH 100V 42A D2PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF1310NSTRRPBF | 制造商:International Rectifier 功能描述:MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;D2Pak;PD 160W;VGS +/-20V 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 42A 3PIN D2PAK - Tape and Reel |
| IRF1310S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A) |
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