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參數資料
| 型號： | IRF1405ZS-7PPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 4.9mヘ , ID = 120A ) |
| 中文描述： | ㈢的HEXFET功率MOSFET（減振鋼板基本\u003d 55V的，的RDS（on）\u003d4.9米ヘ，身份證\u003d 120A條） |
| 文件頁數： | 1/12頁 |
| 文件大小： | 700K |
| 代理商： | IRF1405ZS-7PPBF |
IRF1405ZS-7PPbF
IRF1405ZL-7PPbF
HEXFET
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 4.9m
I
D
= 120A
www.irf.com
1
AUTOMOTIVE MOSFET
HEXFET
is a registered trademark of International Rectifier.
Description
Specifically designed for Automotive applications,
this HEXFET
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
S
D
G
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Absolute Maximum Ratings
Parameter
Units
A
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
W
W/°C
V
mJ
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
A
mJ
°C
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
10 lbfin (1.1Nm)
230
1.5
± 20
250
810
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
Max.
150
100
120
590
PD - 97206A
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| IRF1405Z | AUTOMOTIVE MOSFET |
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| IRF1405 | Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A) |
| IRF1407L | Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A) |
相關代理商/技術參數 |
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| IRF1405ZSHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 150A 3-Pin(2+Tab) D2PAK |
| IRF1405ZSPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF1405ZSTRL-7P | 功能描述:MOSFET N-CH 55V 120A D2PAK7 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF1405ZSTRL7PP | 功能描述:MOSFET MOSFT 55V 150A 4.9mOhm 150nC-7 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF1405ZSTRLPBF | 功能描述:MOSFET MOSFT 55V 150A 4.9mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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