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參數資料
| 型號： | IRF1407STRL |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 75V的五（巴西）直| 100號A（?。﹟對263AB |
| 文件頁數： | 1/11頁 |
| 文件大?。?/td> | 159K |
| 代理商： | IRF1407STRL |
Parameter
Max.
100
70
520
3.8
200
1.3
± 20
390
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
See Fig.12a, 12b, 15, 16
4.6
-55 to + 175
300 (1.6mm from case )
°C
HEXFET
Power MOSFET
S
D
G
Absolute Maximum Ratings
V
DSS
= 75V
R
DS(on)
= 0.0078
I
D
= 100A
Description
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D
2
Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF1407L) is available for low-
profile applications.
10/05/01
www.irf.com
1
G
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175
°
C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
G
G
G
G
Benefits
PD -94335
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
°
C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
Thermal Resistance
IRF1407S
IRF1407L
TO-262
IRF1407L
D
2
Pak
IRF1407S
**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note #AN-994.
相關PDF資料 |
PDF描述 |
|---|---|
| IRF1407STRR | TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB |
| IRF1407 | Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A) |
| IRF1503 | AUTOMOTIVE MOSFET |
| IRF150 | TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A) |
| IRF150 | N-CHANNEL POWER MOSFETS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF1407STRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) D2PAK T/R |
| IRF1407STRLPBF | 功能描述:MOSFET MOSFT 75V 100A 7.8mOhm 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF1407STRR | 功能描述:MOSFET N-CH 75V 100A D2PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF1407STRRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) D2PAK T/R |
| IRF1407STRRPBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 7.8mOhms 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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