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參數資料
| 型號： | IRF1902PBF |
| 廠商： | International Rectifier |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.0 to 5.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/9頁 |
| 文件大小： | 144K |
| 代理商： | IRF1902PBF |
Parameter
Max.
20
4.2
3.4
17
2.5
1.6
0.02
± 12
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/°C
V
°C
V
GS
T
J,
T
STG
-55 to + 150
8/10/04
www.irf.com
1
IRF1902PbF
HEXFET Power MOSFET
R
DS(on)
max (m
85@V
GS
= 4.5V
170@V
GS
= 2.7V
V
DSS
20V
I
D
4.0A
3.2A
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
These N-Channel
HEXFET
power MOSFET
s from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering technique
Description
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
Symbol
R
θ
JL
R
θ
JA
Parameter
Typ.
–––
–––
Max.
20
50
Units
Junction-to-Drain Lead
Junction-to-Ambient
°C/W
Thermal Resistance
PD - 95496
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