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參數資料
| 型號： | IRF250SMD |
| 英文描述： | N-Channel Power MOSFET(Vdss:200V,Id(cont):14A,Rds(on):0.1Ω)(N溝道功率MOS場效應管(Vdss:200V,Id(cont):14A,Rds(on):0.1Ω)) |
| 中文描述： | N溝道功率MOSFET（減振鋼板基本：200伏，身份證（續）：14A條的Rds（on）：0.1Ω）（不適用馬鞍山溝道功率場效應管（減振鋼板基本：200伏，身份證（續）：14A條的Rds（on） ：0.1Ω）） |
| 文件頁數： | 2/2頁 |
| 文件大小： | 23K |
| 代理商： | IRF250SMD |
IRF250SMD
Prelim. 7/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukParameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
3
15V
V
GS
= 0
I
D
= 1mA
I
D
= 14A
I
D
= 22A
I
D
= 250
m
A
I
DS
= 14A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= 22A
V
DS
= 0.5BV
DSS
I
D
= 22A
V
DD
= 100V
I
D
= 22A
R
G
= 2.35
W
I
S
= 22A
V
GS
= 0
I
F
= 22A
d
i
/ d
t
￡
100A/
m
s V
DD
￡
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(Tamb= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1
Gate – Source Charge
1
Gate – Drain (“Miller”) Charge
1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
200
0.29
0.100
0.105
4
2
9
25
250
100
–100
3500
700
110
55
115
8
22
60
35
190
170
130
30
22
88
1.9
950
9.0
Negligible
0.8
2.8
V
V/°C
W
V
S
(
(
W
)
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(from centre of drain pad to die)
Internal Source Inductance
(from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS
相關PDF資料 |
PDF描述 |
|---|---|
| IRF250SM | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 22A I(D) | LLCC |
| IRF2525 | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 20A I(D) | TO-220AB |
| IRF255 | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 20A I(D) | TO-204AA |
| IRF2805 | 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
| IRF2807STRL | TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 82A I(D) | TO-263AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF251 | 制造商:Motorola Inc 功能描述: |
| IRF251R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 30A I(D) | TO-204AE |
| IRF252 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:N-CHANNEL POWER MOSFETS |
| IRF2525 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 20A I(D) | TO-220AB |
| IRF252R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-204AE |
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