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參數(shù)資料
| 型號： | IRF2804S-7P |
| 廠商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽車MOSFET的 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 263K |
| 代理商： | IRF2804S-7P |
IRF2804S-7P
HEXFET
Power MOSFET
V
DSS
= 40V
R
DS(on)
= 1.6m
I
D
= 160A
www.irf.com
1
AUTOMOTIVE MOSFET
HEXFET
is a registered trademark of International Rectifier.
Description
Specifically designed for Automotive applications,
this HEXFET
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operat-
ing temperature, fast switching speed and im-
proved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applica-
tions.
Absolute Maximum Ratings
S
D
G
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
PD - 96891
Parameter
Units
A
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
W
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
W/°C
V
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
A
Repetitive Avalanche Energy
mJ
°C
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
–––
Max.
0.50
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient
–––
62
Junction-to-Ambient (PCB Mount, steady state)
–––
40
Max.
320
230
1360
160
10 lbfin (1.1Nm)
330
2.2
± 20
630
1050
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF2804S-7PPBF | 功能描述:MOSFET 40V 1 N-CH HEXFET 1.6mOhms 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF2804S-7PPBF | 制造商:International Rectifier 功能描述:MOSFET 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 40V, 320A, D2-PAK |
| IRF2804SPBF | 功能描述:MOSFET 40V 1 N-CH HEXFET 2.3mOhms 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF2804SPBF | 制造商:International Rectifier 功能描述:MOSFET N D2-PAK |
| IRF2804SPBF | 制造商:International Rectifier 功能描述:MOSFET |
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