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參數資料
| 型號： | IRF2807STRR |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 82A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 75V的五（巴西）直| 82A條（丁）|對263AB |
| 文件頁數： | 2/9頁 |
| 文件大小： | 151K |
| 代理商： | IRF2807STRR |
2
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Parameter
Min. Typ. Max. Units
55
–––
–––
0.06
–––
3.9
2.0
–––
91
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
–––
38
–––
52
–––
14
–––
120
–––
68
–––
110
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 104A
V
DS
= 10V, I
D
= 250μA
V
DS
= 25V, I
D
= 104A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 104A
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 104A
R
G
= 2.5
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
4.7
4.0
–––
20
250
200
-200
230
57
78
–––
–––
–––
–––
V
V/°C
m
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Source-Drain Ratings and Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
5110 –––
1190 –––
210
6470 –––
860
1600 –––
pF
–––
–––
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.08mH
R
G
= 25
, I
AS
= 104A. (See Figure 12).
I
SD
≤
104A, di/dt
≤
240A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400μs; duty cycle
≤
2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 104A, V
GS
= 0V
T
J
= 25°C, I
F
= 104A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
80
290
1.3
120
430
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
175
700
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
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