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參數資料
| 型號： | IRF3007 |
| 廠商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽車MOSFET的 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 149K |
| 代理商： | IRF3007 |
HEXFET
Power MOSFET
Specifically designed for Automotive applications, this
design of HEXFET
Power MOSFETs utilizes the
lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of
this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These combine
to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide
variety of other applications.
S
D
G
V
DSS
= 75V
R
DS(on)
= 0.0126
I
D
= 75A
Description
www.irf.com
1
●
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
●
●
●
●
Features
Typical Applications
42 Volts Automotive Electrical Systems
●
AUTOMOTIVE MOSFET
TO-220AB
IRF3007
Parameter
Typ.
–––
0.50
–––
Max.
0.74
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
Parameter
Max.
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
Continuous Drain Current, V
GS
@ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
80
56
75
320
200
1.3
± 20
280
946
A
W
W/°C
V
mJ
V
GS
E
AS
E
AS
(6 sigma)
I
AR
E
AR
T
J
T
STG
See Fig.12a, 12b, 15, 16
A
mJ
-55 to + 175
300 (1.6mm from case )
1.1 (10)
°C
Nm (lbfin)
Absolute Maximum Ratings
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF3007L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:75V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
| IRF3007LPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF3007PBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF3007S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF3007SPBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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