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參數資料
| 型號： | IRF3007LPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/11頁 |
| 文件大小： | 263K |
| 代理商： | IRF3007LPBF |
HEXFET
Power MOSFET
Specifically designed for Automotive applications, this design of
HEXFET
Power MOSFETs utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed and improved
repetitive avalanche rating. These combine to make this design an
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
S
D
G
V
DSS
= 75V
R
DS(on)
= 0.0126
I
D
= 62A
Description
www.irf.com
1
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Features
Typical Applications
42 Volts Automotive Electrical Systems
Lead-Free
AUTOMOTIVE MOSFET
IRF3007SPbF
IRF3007LPbF
TO-262
IRF3007L
D
2
Pak
IRF3007S
** This is applied to D
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Parameter
Max.
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
62
44
320
120
0.8
± 20
290
946
A
W
W/°C
V
mJ
V
GS
E
AS
E
AS
(6 sigma)
I
AR
E
AR
T
J
T
STG
See Fig.12a, 12b, 15, 16
A
mJ
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
Max.
1.25
62
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady state)**
Thermal Resistance
PD - 95494
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF3007PBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF3007S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF3007SPBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF3007STRLPBF | 制造商:International Rectifier 功能描述:75V D2PAK - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N CH 75V 62A TO220AB 制造商:International Rectifier 功能描述:MOSFET 75V D2PAK |
| IRF3103 | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:HEXFET㈢ Power MOSFET |
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