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參數資料
| 型號： | IRF300 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED |
| 中文描述： | 50W到500W的大功率線繞電阻扁形鋁殼 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 84K |
| 代理商： | IRF300 |
POWER SOLUTION - NIKKOHM
50W to 500W HIGH POWER WIRE WOUND RESISTORS
FLAT SHAPED ALUMINUM HOUSED
IRN50-IRN150
IRF150-IRF500
Features and Applications
Dimensions (mm)
Type
A
B
C
IRN 50
70+/-1
60+/-0.3
10
IRN100
120+/-1
60+/-0.3
10
IRN150
170+/-1
60+/-0.3
10
IRF100
90+/-1
80+/-0.3
10
IRF150
120+/-1
80+/-0.3
10
IRF200
150+/-1
80+/-0.3
10
IRF250
180+/-1
80+/-0.3
10
IRF300
210+/-1
80+/-0.3
10
IRF400
270+/-1
80+/-0.3
10
IRF500
330+/-1
80+/-0.3
10
D
E
F
-
-
-
-
-
-
-
95
125
155
G dia.
4-5.3 dia.
4-5.3 dia.
4-5.3 dia.
4-5.3 dia.
4-5.3 dia.
4-5.3 dia.
4-5.3 dia.
6-5.3 dia.
6-5.3 dia.
6-5.3 dia.
Weight(g)
100
160
220
155
200
245
290
335
430
525
50+/-0.3
50+/-0.3
50+/-0.3
70+/-0.3
70+/-0.3
70+/-0.3
70+/-0.3
70+/-0.3
70+/-0.3
70+/-0.3
50+/-0.3
100+/-0.3
150+/-0.3
70+/-0.3
100+/-0.3
130+/-0.3
160+/-0.3
190+/-0.3
250+/-0.3
310+/-0.3
Non-inductive, flat shaped aluminum housed wire wound fixed resistors with 50W to 500W..
Minimum resistance of 1ohm, +/-0.5% tolerance available.
10mm thickness allows excellent heat extrusion from resistor.
Narrower body (IRN) will be suitable for high density installation.
Light weight silicone filled insulation and higher temperature operating cement filled
insulation are prepared.
Strong over load characteristics are fit for applications of industrial power electronics,
switching power supplies, braking resistors for motor control electronics, rush current
protection in automotive electronics, industrial power supplies.
D B
G
300+/-10 F F
E C
A
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF3000 | 功能描述:MOSFET N-CH 300V 1.6A 8-SOIC RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF3000PBF | 功能描述:MOSFET N-CH 300V 1.6A 8-SOIC RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF3000TR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 300V 1.6A 8-Pin SOIC T/R |
| IRF3007 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE MOSFET |
| IRF3007L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:75V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
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