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參數(shù)資料
| 型號： | IRF3711STRL |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 20V的五（巴西）直|已廢除一（d）|對263AB |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 161K |
| 代理商： | IRF3711STRL |
IRL3705NS/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 46A, V
GS
= 0V
T
J
= 25°C, I
F
= 46A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
94
290
1.3
140
440
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
S
D
G
A
89
310
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Uses IRL3705N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
I
SD
≤
46A, di/dt
≤
250A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
V
DD
= 25V, starting T
J
= 25°C, L = 320μH
R
G
= 25
, I
AS
= 46A. (See Figure 12)
Parameter
Min. Typ. Max. Units
55
–––
–––
0.056 –––
–––
––– 0.010
–––
––– 0.012
–––
––– 0.018
1.0
–––
50
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
–––
140
–––
37
–––
78
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 46A
V
GS
= 5.0V, I
D
= 46A
V
GS
= 4.0V, I
D
= 39A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 46A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
= 46A
V
DS
= 44V
V
GS
= 5.0V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 46A
R
G
= 1.8
,
V
GS
= 5.0V
R
D
= 0.59
,
See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
2.0
–––
25
250
100
-100
98
19
49
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
3600 –––
870
320
–––
–––
pF
nH
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
L
S
Internal Source Inductance
7.5
ns
I
DSS
Drain-to-Source Leakage Current
A
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
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