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參數資料
| 型號： | IRF3805LPbF |
| 廠商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽車MOSFET的 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 428K |
| 代理商： | IRF3805LPBF |
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 97046
HEXFET
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 3.3m
I
D
= 75A
Specifically designed for Automotive applications,
this HEXFET
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
S
D
G
Description
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Features
IRF3805PbF
IRF3805SPbF
IRF3805LPbF
D
2
Pak
IRF3805SPbF
TO-220AB
IRF3805PbF
TO-262
IRF3805LPbF
Parameter
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
(Package limited)
Pulsed Drain Current
A
Power Dissipation
W
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
W/°C
V
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
–––
Max.
0.5
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
0.50
–––
Junction-to-Ambient
–––
62
Junction-to-Ambient (PCB Mount)
–––
40
940
650
See Fig.12a, 12b, 15, 16
300
2.0
± 20
Max.
210
150
75
890
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
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|---|---|
| IRF3805PBF | AUTOMOTIVE MOSFET |
| IRF3805SPbF | AUTOMOTIVE MOSFET |
| IRF3805 | AUTOMOTIVE MOSFET |
| IRF3805L | AUTOMOTIVE MOSFET |
| IRF3805S | AUTOMOTIVE MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF3805PBF | 功能描述:MOSFET MOSFT 55V 220A 3.3mOhm 190nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF3805S | 功能描述:MOSFET N-CH 55V 75A D2PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF3805S-7P | 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE MOSFET |
| IRF3805S-7PHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 240A 7-Pin(6+Tab) D2PAK |
| IRF3805S-7PPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 2.6mOhms 49nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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