欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: IRF3808S
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 106A I(D) | TO-263AB
中文描述: 晶體管| MOSFET的| N溝道| 75V的五(巴西)直| 106A章一(d)|對263AB
文件頁數: 2/11頁
文件大小: 161K
代理商: IRF3808S
IRF3808S/IRF3808L
2
www.irf.com
Parameter
Min. Typ. Max. Units
75
–––
–––
0.086
–––
–––
5.9
2.0
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
–––
31
–––
50
–––
16
–––
140
–––
68
–––
120
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 82A
V
DS
= 10V, I
D
= 250μA
V
DS
= 25V, I
D
= 82A
V
DS
= 75V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 150
°
C
V
GS
= 20V
V
GS
= -20V
I
D
= 82A
V
DS
= 60V
V
GS
= 10V
V
DD
= 38V
I
D
= 82A
R
G
= 2.5
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V,
= 1.0MHz
V
GS
= 0V, V
DS
= 60V,
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/
°
C
m
V
S
7.0
4.0
–––
20
250
200
-200
220
47
76
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Source-Drain Ratings and Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
5310
–––
890
130
6010
–––
570
1140
–––
–––
–––
pF
–––
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25
°
C, L = 0.130mH
R
G
= 25
, I
AS
= 82A. (See Figure 12).
I
SD
82A, di/dt
310A/μs, V
DD
V
(BR)DSS
,
T
J
175
°
C
Pulse width
400μs; duty cycle
2%.
Notes:
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 82A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 82A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
93
340
1.3
140
510
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
106
550
A
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
相關PDF資料
PDF描述
IRF3808STRL TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 106A I(D) | TO-262
IRF3808STRR TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 106A I(D) | TO-263AB
IRF3808L Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
IRF4435 TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO
IRF448 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9.6A I(D) | TO-204AA
相關代理商/技術參數
參數描述
IRF3808SPBF 功能描述:MOSFET 75V 1 N-CH HEXFET 7mOhms 150nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF3808SPBF 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR POWER DISSIPATION:200W
IRF3808STRL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 106A I(D) | TO-262
IRF3808STRLPBF 功能描述:MOSFET MOSFT 75V 105A 7mOhm 150nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF3808STRR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 106A I(D) | TO-263AB
主站蜘蛛池模板: 开平市| 凭祥市| 共和县| 安顺市| 新野县| 乐安县| 邹平县| 若羌县| 巴马| 常宁市| 永胜县| 浦东新区| 榆树市| 青海省| 靖州| 昌黎县| 日土县| 麟游县| 潞城市| 巫溪县| 句容市| 卫辉市| 汤阴县| 恩施市| 鄂尔多斯市| 茂名市| 当阳市| 昭觉县| 新乡县| 武强县| 错那县| 绥中县| 井冈山市| 华宁县| 深泽县| 屯门区| 高阳县| 通州区| 壶关县| 忻州市| 七台河市|