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參數資料
| 型號： | IRF5210L |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d- 100V的，的Rds（on）\u003d 0.06ohm，身份證\u003d- 40A條） |
| 文件頁數： | 1/10頁 |
| 文件大小： | 186K |
| 代理商： | IRF5210L |
IRF5210S/L
HEXFET
Power MOSFET
PD - 91405C
l
Advanced Process Technology
l
Surface Mount (IRF5210S)
l
Low-profile through-hole (IRF5210L)
l
175°C Operating Temperature
l
Fast Switching
l
P-Channel
l
Fully Avalanche Rated
Description
5/13/98
S
D
G
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
2
Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF5210L) is available for low-
profile applications.
V
DSS
= -100V
R
DS(on)
= 0.06
I
D
= -40A
D2
TO-262
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Thermal Resistance
°C/W
Parameter
Max.
-40
-29
-140
3.8
200
1.3
± 20
780
-21
20
-5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
相關PDF資料 |
PDF描述 |
|---|---|
| IRF5210S | Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) |
| IRF5210 | Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) |
| IRF5305PBF | HEXFET Power MOSFET |
| IRF5305 | Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A) |
| IRF530L | Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF5210LHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 40A 3-Pin(3+Tab) TO-262 |
| IRF5210LPBF | 功能描述:MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF5210PBF | 功能描述:MOSFET MOSFT PCh -100V -40A 60mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF5210PBF | 制造商:International Rectifier 功能描述:MOSFET P -100V -40A TO-220 制造商:International Rectifier 功能描述:MOSFET P TO-220 TUBE 50 制造商:International Rectifier 功能描述:MOSFET, P, -100V, -40A, TO-220 制造商:International Rectifier 功能描述:MOSFET, P, -100V, -40A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power ;RoHS Compliant: Yes |
| IRF5210PBF | 制造商:International Rectifier 功能描述:MOSFET |
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