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參數(shù)資料
| 型號： | IRF530R |
| 廠商： | Harris Corporation |
| 英文描述： | N-Channel Power MOSFETs Avalanche Energy Rated |
| 中文描述： | N溝道功率MOSFET額定雪崩能量 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 178K |
| 代理商： | IRF530R |
IRF530NS/L
HEXFET
Power MOSFET
PD - 91352A
l
Advanced Process Technology
l
Surface Mount (IRF530NS)
l
Low-profile through-hole (IRF530NL)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF530NL) is available for low-profile applications.
Description
V
DSS
=100V
R
DS(on)
= 0.11
I
D
= 17A
D2
TO-262
Parameter
Typ.
–––
–––
Max.
1.9
40
Units
R
θ
JC
R
θ
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Thermal Resistance
°C/W
Parameter
Max.
17
12
60
3.8
79
0.53
± 20
150
A
7.9
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current9.0
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
mJ
V/ns
-55 to + 175
300 (1.6mm from case )
°C
S
D
G
5/13/98
1
相關PDF資料 |
PDF描述 |
|---|---|
| IRF530PBF | Dynamic dv/dt Rating, Fast Switching, Ease of Paralleling, Simple Drive Requirements |
| IRF530 | Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A) |
| IRF530NS | Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A) |
| IRF530 | N-Channel Power MOSFETs, 20 A, 60-100 V |
| IRF530 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF530S | 功能描述:MOSFET N-Chan 100V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF530SPBF | 功能描述:MOSFET N-Chan 100V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF530STRL | 功能描述:MOSFET N-Chan 100V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF530STRLPBF | 功能描述:MOSFET N-Chan 100V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF530STRR | 功能描述:MOSFET N-Chan 100V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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