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參數資料
| 型號： | IRF540, |
| 廠商： | Intersil Corporation |
| 英文描述： | 28A, 100V, 0.077 Ohm,N-Channel PowerMOSFET(28A, 100V, 0.077 Ohm,N溝道增強型功率MOS場效應管) |
| 中文描述： | 第28A，100V的，0.077 Ohm的N通道PowerMOSFET（第28A，100V的，0.077 Ohm的N溝道增強型功率馬鞍山場效應管） |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 75K |
| 代理商： | IRF540, |
1
TM
File Number
2309.6
IRF540, RF1S540SM
28A, 100V, 0.077 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17421.
Features
28A, 100V
r
DS(ON)
= 0.077
Single Pulse Avalanche Energy Rated
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF540
TO-220AB
IRF540
RF1S540SM
TO-263AB
RF1S540SM
NOTE: Whenordering,usetheentirepartnumber.Addthesuffix9Ato
obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
June 2000
[ /Title
(IRF54
0,
RF1S5
40SM)
/Sub-
ject
(28A,
100V,
0.077
Ohm,
N-
Chan-
nel
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(Inter-
sil
Corpo-
ration,
N-
Chan-
nel
Power
MOS-
FETs,
TO-
220AB
, TO-
263AB
)
/Cre-
ator ()
/DOCI
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
Intersil and Design is a trademark of Intersil Corporation.
Copyright
Intersil Corporation 2000
NOT RECOMMENIRF540N
POSSIBLE SUBSTITUTE PRODUCT
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF540,127 | 功能描述:MOSFET RAIL IR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF540/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement-Mode Silicon Gate |
| IRF540_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 100V - 0.055ヘ - 22A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET |
| IRF540_R4941 | 功能描述:MOSFET USE 512-IRF540A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF540837D | 制造商:MITSUBISHI 功能描述:NEW |
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