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參數資料
| 型號： | IRF540NPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 5/9頁 |
| 文件大小： | 86K |
| 代理商： | IRF540NPBF |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF540, IRF540S
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
Fig.8. Typical transconductance, T
j
= 25 C
g
fs
= f(I
D
)
Fig.9. Normalised drain-source on-state resistance.
R
DS(ON)
/R
DS(ON)25 C
= f(T
j
)
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
0
1
2
3
4
5
6
7
8
9
10
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS > ID X RDS(ON)
Tj = 25 C
175 C
Threshold Voltage, VGS(TO) (V)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Junction Temperature, Tj (C)
typical
maximum
minimum
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
175 C
VDS > ID X RDS(ON)
Drain current, ID (A)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Gate-source voltage, VGS (V)
minimum
typical
maximum
Normalised On-state Resistance
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
2.7
2.9
-60
-40
-20
0
Junction temperature, Tj (C)
20
40
60
80
100 120 140 160 180
10
100
1000
10000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
August 1999
5
Rev 1.100
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|---|---|
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF540NS | 制造商:International Rectifier 功能描述:MOSFET N D2-PAK |
| IRF540NS_05 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET㈢ Power MOSFET |
| IRF540NSHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 33A 3PIN D2PAK - Rail/Tube |
| IRF540NSPBF | 功能描述:MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF-540NSPBF | 制造商:International Rectifier 功能描述: |
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