- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384490 > IRF5852 (International Rectifier) Power MOSFET(Vdss=20V) PDF資料下載
參數(shù)資料
| 型號(hào)： | IRF5852 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=20V) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 20V的） |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 239K |
| 代理商： | IRF5852 |
Parameter
Max.
20
2.7
2.2
11
0.96
0.62
7.7
± 12
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/°C
V
°C
V
GS
T
J,
T
STG
-55 to + 150
3/1/01
Parameter
Max.
130
Units
°C/W
R
θ
JA
www.irf.com
Maximum Junction-to-Ambient
Thermal Resistance
Absolute Maximum Ratings
W
1
IRF5852
HEXFET
Power MOSFET
R
DS(on)
max (
0.090@V
GS
= 4.5V
0.120@V
GS
= 2.5V
These N-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5852 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and R
DS(on)
reduction enables an increase in current-handling
capability.
Description
l
Ultra Low On-Resistance
l
Dual N-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
Low Gate Charge
PD - 93999
TSOP-6
Top View
V
DSS
20 V
)
I
D
2.7A
2.2A
S2
G2
G1
3
2
1
4
5
6
D1
D2
S1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF5EA1310 | POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.036ohm, Id=23A) |
| IRF5NJZ48 | POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.016ohm, Id=22A*) |
| IRF5Y3315CM | Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes |
| IRF5Y5305CM | POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-18A*) |
| IRF5Y540CM | POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.058ohm, Id=18A*) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF5852TR | 功能描述:MOSFET 2N-CH 20V 2.7A 6-TSOP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF5852TRPBF | 功能描述:MOSFET MOSFT DUAL NCh 20V 2.7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF5D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| IRF5EA1310 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 23A 28PIN LCC - Bulk |
| IRF5EA1310SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 23A 28PIN LCC - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。