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參數(shù)資料
| 型號： | IRF5NJ5305 |
| 廠商： | International Rectifier |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:37; Connector Shell Size:28; Connecting Termination:Solder; Body Style:Straight; Circular Contact Gender:Pin; Gender:Female |
| 中文描述： | 功率MOSFET P溝道（減振鋼板基本\u003d- 55V的，的Rds（on）\u003d 0.065ohm，身份證\u003d- 22A條*） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 118K |
| 代理商： | IRF5NJ5305 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
-22*
-16
-88
75
0.6
±20
160
-16
7.5
2.8
-55 to 150
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (for 5 s)
1.0 (Typical)
g
o
C
A
11/10/00
www.irf.com
1
Product Summary
Part Number
IRF5NJ5305
BVDSS
-55V
R
DS(on)
0.065
-22A*
I
D
For footnotes refer to the last page
HEXFET
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRF5NJ5305
55V, P-CHANNEL
Fifth Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
* Current is limited by package
SMD-0.5
Features:
Low R
DS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
PD - 94033
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| IRF5NJ540 | POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*) |
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| IRF5Y31N20 | Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes |
| IRF5Y3205CM | Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF5NJ5305SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 55V 22A 3SMD-1 - Bulk |
| IRF5NJ5305SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 55V 22A 3SMD-1 - Bulk |
| IRF5NJ540 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 22A 3SMD-0.5 - Bulk 制造商:International Rectifier 功能描述:Single N-Channel 100 V 75 W 104 nC Hexfet Power Mosfet Surface Mount - SMD-0.5 |
| IRF5NJ540SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 22A 3SMD-1 - Bulk |
| IRF5NJ540SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 22A 3SMD-0.5 - Bulk |
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