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參數資料
| 型號： | IRF6156 |
| 廠商： | International Rectifier |
| 英文描述： | FlipFET Power MOSFET |
| 中文描述： | FlipFET功率MOSFET |
| 文件頁數： | 1/13頁 |
| 文件大小： | 249K |
| 代理商： | IRF6156 |
FlipFET
Power MOSFET
R
SS(on)
max
40m @V
GS1,2
= 4.5V
60m @V
GS1,2
= 2.5V
IRF6156
www.irf.com
1
Description
True chip-scale packaging is available from International Recti-
fier. Through the use of advanced processing techniques and a
unique packaging concept, extremely low on-resistance and the
highest power densities in the industry have been made available
for battery and load management applications. These benefits,
combined with the ruggedized device design that International
Rectifier is well known for,
provide the designer with an
extremely efficient and reliable device.
The
TSSOP-8 package and has a profile of less than .8mm. Com-
bined with the low thermal resistance of the die level device, this
makes the
the best device for applications where
printed circuit board space is at a premium and in extremely thin
application environments such as battery packs, mobile phones
and PCMCIA cards.
package, is one-fifth the footprint of a comparable
Ultra Low
R
SS(on)
per Footprint Area
Low
Thermal Resistance
Bi-Directional N-Channel Switch
Super Low Profile (<.8mm)
Available Tested on Tape & Reel
ESD Protection Diode
V
SS
20V
I
S
±6.5
±5.2
Absolute Maximum Ratings
Parameter
Units
V
V
SS
I
S
@ T
A
= 25°C
I
S
@ T
A
= 70°C
I
SM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Source-to-Source Voltage
Continuous Current, V
GS1
= V
GS2
= 4.5V
Continuous Current, V
GS1
= V
GS2
= 4.5V
Pulsed Current
Power Dissipation
Power Dissipation
A
W
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
mW/°C
V
°C
V
GS
T
J
T
STG
Thermal Resistance
Parameter
Typ.
–––
35
Max.
50
–––
Units
°C/W
R
θ
JA
R
θ
J-PCB
Junction-to-Ambient
Junction-to-PCB
2.5
1.6
20
±12
Max.
20
±6.5
±5.2
33
-55 to + 150
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