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參數資料
型號: IRF630
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS transistor(N溝道 TrenchMOS 晶體管)
中文描述: 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC PACKAGE-3
文件頁數: 8/9頁
文件大小: 97K
代理商: IRF630
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF630, IRF630S
MECHANICAL DATA
Fig.16. SOT404 surface mounting package. Centre pin connected to mounting base.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
A1
D1
D
max.
E
e
Lp
HD
Q
c
2.54
2.60
2.20
15.40
14.80
2.90
2.10
11
1.60
1.20
10.30
9.70
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
b
DIMENSIONS (mm are the original dimensions)
SOT404
0
2.5
5 mm
scale
Plastic single-ended surface mounted package (Philips version of D
2
-PAK); 3 leads
(one lead cropped)
SOT404
e
e
E
b
D1
HD
D
Q
Lp
c
A1
A
1
3
2
mounting
base
98-12-14
99-06-25
August 1999
8
Rev 1.100
相關PDF資料
PDF描述
IRF630FP N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET
IRF630 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs
IRF630 Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
IRF630 N-Channel Power MOSFETs, 12A, 150-200 V
IRF640FI TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-220VAR
相關代理商/技術參數
參數描述
IRF630 制造商:STMicroelectronics 功能描述:MOSFET N TO-220
IRF630 制造商:STMicroelectronics 功能描述:MOSFET N 200V 9A TO-220 制造商:STMicroelectronics 功能描述:MOSFET, N, 200V, 9A, TO-220 制造商:STMicroelectronics 功能描述:MOSFET, N, 200V, 9A, TO-220, Transistor Polarity:N Channel, Continuous Drain Current Id:9A, Drain Source Voltage Vds:200V, On Resistance Rds(on):400mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation , RoHS Compliant: Yes
IRF630_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 200V - 0.35ヘ - 9A TO-220/TO-220FP Mesh overlay⑩ II Power MOSFET
IRF630_R4941 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF630A 制造商:Fairchild Semiconductor Corporation 功能描述:
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