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參數資料
| 型號： | IRF630S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SOT-404, D2PAK-3 |
| 文件頁數： | 2/9頁 |
| 文件大小： | 97K |
| 代理商： | IRF630S |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF630, IRF630S
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 5 A;
t
p
= 380
μ
s; T
j
prior to avalanche = 25C;
V
≤
25 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig;14
MIN.
-
MAX.
250
UNIT
mJ
I
AS
Peak non-repetitive
avalanche current
-
9
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
1.7
K/W
SOT78 package, in free air
SOT404 package, pcb mounted, minimum
footprint
-
-
60
50
-
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
200
178
2
1
-
-
-
3.8
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
3
4
-
-
6
300
400
-
1.12
9
-
10
100
0.05
10
-
250
-
39
-
6.3
-
21
8
-
19
-
25
-
15
-
3.5
-
4.5
-
V
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current V
GS
=
±
20 V; V
DS
= 0 V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
V
GS
= 10 V; I
D
= 5.4 A
m
S
nA
μ
A
μ
A
nC
nC
nC
ns
ns
ns
ns
nH
nH
T
j
= 175C
g
fs
I
GSS
I
DSS
V
DS
= 25 V; I
= 5.4 A
V
DS
= 200 V; V
GS
= 0 V
V
DS
= 160 V; V
GS
= 0 V; T
j
= 175C
I
D
= 5.9 A; V
DD
= 160 V; V
GS
= 10 V
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
V
DD
= 100 V; R
= 10
;
V
= 10 V; R
G
= 5.6
Resistive load
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
-
-
-
959
93
54
-
-
-
pF
pF
pF
August 1999
2
Rev 1.100
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF630SPBF | 功能描述:MOSFET N-Chan 200V 9.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF630ST4 | 功能描述:MOSFET N-Ch 200 Volt 9 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF630STRL | 功能描述:MOSFET N-Chan 200V 9.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF630STRLPBF | 功能描述:MOSFET N-Chan 200V 9.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF630STRR | 功能描述:MOSFET N-CH 200V 9A D2PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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