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參數(shù)資料
| 型號： | IRF640 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）\u003d 0.18ohm，身份證\u003d 18A條） |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 95K |
| 代理商： | IRF640 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF640, IRF640S
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’
technology
Low on-state resistance
Fast switching
Low thermal resistance
V
DSS
= 200 V
I
D
= 16 A
R
DS(ON)
≤
180 m
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using
Trench
technology, intended for use in off-line
switchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuits
and general purpose switching applications.
The IRF640 is supplied in the SOT78 (TO220AB) conventional leaded package.
The IRF640S is supplied in the SOT404 (D
2
PAK) surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2
PAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
±
20
16
11
64
136
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1
3
tab
2
1 2 3
tab
1
It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF640 | 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs |
| IRF640B | 200V N-Channel MOSFET |
| IRF650A | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 28A I(D) | TO-220AB |
| IRF654A | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 21A I(D) | TO-220AB |
| IRF7102 | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 2A I(D) | SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF640,127 | 功能描述:MOSFET N-CH 200V 16A TO-220AB RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:TrenchMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF640 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| IRF640/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Field Effect Transistor |
| IRF640_R4941 | 功能描述:MOSFET TO-220 N-CH 200V 18A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF640A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
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