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參數(shù)資料
| 型號(hào)： | IRF6614 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 259K |
| 代理商： | IRF6614 |
www.irf.com
1
11/8/04
IRF6614
DirectFETDirectFET
ISOMETRIC
Fig 1.
Typical On-Resistance Vs. Gate Voltage
Application Specific MOSFETs
Lead and Bromide Free
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching above 1MHz
Ideal for CPU Core and Telecom Synchronous
Rectification in DC-DC Converters
Optimized for Control FET socket of Sync. Buck Converter
Low Conduction Losses
Compatible with existing Surface Mount Techniques
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.43mH, R
G
= 25
, I
AS
= 10.2A.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
Description
The IRF6614 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal
resistance by 80%.
MQ
MX
MT
The IRF6614 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest genera-
tion of processors operating at higher frequencies. The IRF6614 has been optimized for parameters that are critical in synchronous
buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socke
t.
Absolute Maximum Ratings
Parameter
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
20
ID = 12.7A
Units
V
A
mJ
A
10.2
Max.
40
10.1
55
102
22
±20
12.7
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
4
8
12
16
T
)
TJ = 25°C
TJ = 125°C
0
10
20
30
40
50
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VG
VDS= 32V
VDS= 20V
ID= 10.2A
V
DSS
40V max
Q
g tot
V
GS
R
DS(on)
5.9m
@ 10V
Q
gs2
R
DS(on)
7.1m
@ 4.5V
Q
oss
V
gs(th)
±20V max
Q
gd
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
Q
rr
19nC
6.0nC
1.4nC
5.5nC
9.5nC
1.8V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF6617TR1 | HEXFET Power MOSFET |
| IRF6617 | HEXFET Power MOSFET |
| IRF6620 | HEXFETPower MOSFET |
| IRF6626 | DirectFET TM Power MOSFET |
| IRF6635PBF | DirectFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6614TR1 | 功能描述:MOSFET 40V 1 N-CH 5.9mOhm DirectFET 1.8Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6614TR1PBF | 功能描述:MOSFET MOSFT 40V 55A 8.3mOhm 19nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6614TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6614TRPBF | 功能描述:MOSFET 40V 1 N-CH 5.9mOhm DirectFET 1.8Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6616 | 功能描述:MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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