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參數資料
| 型號： | IRF7105QPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 331K |
| 代理商： | IRF7105QPBF |
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P-CHANNEL MOSFET
N-CHANNEL MOSFET
www.irf.com
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Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
Specifically designed for Automotive applications, these
HEXFET
Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
in Tape & Reel.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF7105QPBF_10 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPOWERMOSFET |
| IRF7105QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7105TRPBF | 功能描述:MOSFET MOSFT DUAL N/PCh 25V 3.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7106 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=+-20V) |
| IRF7107 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
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