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參數資料
| 型號： | IRF7306PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數： | 1/20頁 |
| 文件大小： | 334K |
| 代理商： | IRF7306PBF |
TPS77901, TPS77918, TPS77925, TPS77930
250-mA LDO REGULATOR WITH INTEGRATED RESET IN A MSOP8 PACKAGE
SLVS283A – MARCH 2000 – REVISED MARCH 2000
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Open Drain Power-On Reset With 220-ms
Delay
250-mA Low-Dropout Voltage Regulator
Available in 1.8-V, 2.5-V, 3-V, Fixed Output
and Adjustable Versions
Dropout Voltage Typically 200 mV
at 250 mA (TPS77930)
Ultra Low 92-
μ
A Quiescent Current (Typ)
8-Pin MSOP (DGK) Package
Low Noise (55
μ
V
rms
) With No Bypass
Capacitor (TPS77918)
2% Tolerance Over Specified Conditions
For Fixed-Output Versions
Fast Transient Response
Thermal Shutdown Protection
See the TPS773xx and TPS774xx Family of
Devices for Active Low Enable
description
The TPS779xx is a low dropout regulator with
integrated power-on reset. The device is capable
of supplying 250 mA of output current with a
dropout of 200 mV (TPS77930). Quiescent
current is 92
μ
A at full load dropping down to 1
μ
A
when the device is disabled. The device is
optimized to be stable with a wide range of output
capacitors including low ESR ceramic (10
μ
F) or
low capacitance (1
μ
F) tantalum capacitors. The
device has extremely low noise output perfor-
mance (55
μ
V
rms
) without using any added filter
capacitors. TPS779xx is designed to have a fast
transient response for larger load current
changes.
The TPS779xx is offered in 1.8-V, 2.5-V, and 3-V fixed-voltage versions and in an adjustable version
(programmable over the range of 1.5 V to 5.5 V). Output voltage tolerance is 2% over line, load, and temperature
ranges. The TPS779xx family is available in 8-pin MSOP (DGK) packages.
Because the PMOS device behaves as a low-value resistor, the dropout voltage is very low (typically 200 mV
at an output current of 250 mA for 3.3 volt option) and is directly proportional to the output current. Additionally,
since the PMOS pass element is a voltage-driven device, the quiescent current is very low and independent
of output loading (typically 92
μ
A over the full range of output current, 0 mA to 250 mA). These two key
specifications yield a significant improvement in operating life for battery-powered systems.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
This document contains information on products in more than one phase
of development. The status of each device is indicated on the page(s)
specifying its electrical characteristics.
Copyright
2000, Texas Instruments Incorporated
FB/SENSE
RESET
EN
GND
OUT
OUT
IN
IN
TPS779xx
DGK PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
200
150
100
0
–50 –30
–10
TJ – Junction Temperature –
°
C
10
30
50
70
300
350
400
90
110
130
250
50
TPS77930
DROPOUT VOLTAGE
vs
JUNCTION TEMPERATURE
–
V
IL= 0.05 A
IL= 0.15 A
IL= 0.25 A
VI = 2.9 V
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF7306QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7306QPBF_10 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPOWERMOSFET |
| IRF7306QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7306TR | 功能描述:MOSFET 2P-CH 30V 3.6A 8-SOIC RoHS:否 類別:分離式半導體產品 >> FET - 陣列 系列:HEXFET® 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續漏極(Id) @ 25° C:3A 開態Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF7306TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 3.6A 8-Pin SOIC T/R |
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