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參數(shù)資料
| 型號： | IRF7328 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 108K |
| 代理商： | IRF7328 |
HEXFET
Power MOSFET
10/04/00
IRF7328
Absolute Maximum Ratings
www.irf.com
1
Thermal Resistance
Parameter
Max. Units
62.5 °C/W
R
θ
JA
Maximum Junction-to-Ambient
Parameter
Max.
-30
-8.0
-6.4
-32
2.0
1.3
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Linear Derating Factor 16 mW/°C
V
GS
Gate-to-Source Voltage
± 20 V
T
J
, T
STG
Junction and Storage Temperature Range
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
A
W
W
-55 to + 150
°C
New trench HEXFET
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
G
Trench Technology
G
Ultra Low On-Resistance
G
Dual P-Channel MOSFET
G
Available in Tape & Reel
Description
PD -94000
D1
D1
D2
D2
G1
S2
G 2
S1
Top View
8
1
2
3
4
5
6
7
SO-8
V
DSS
-30V
R
DS(on)
max
21m
@V
GS
= -10V
32m
@V
GS
= -4.5V
I
D
-8.0A
-6.8A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7328HR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 8A 8-Pin SOIC |
| IRF7328PBF | 功能描述:MOSFET DUAL -30V P-CH 20V VGS MAX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7328PBF_10 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Trench Technology Ultra Low On-Resistance |
| IRF7328TR | 功能描述:MOSFET 2P-CH 30V 8A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF7328TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 8A 8-Pin SOIC T/R |
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