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參數資料
| 型號： | IRF7338 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 200K |
| 代理商： | IRF7338 |
Max.
N-Channel
12
6.3
5.2
26
P-Channel
-12
-3.0
-2.5
-13
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
2.0
1.3
16
W
mW/°C
V
°C
V
GS
T
J,
T
STG
±12
± 8.0
-55 to + 150
N-Ch P-Ch
V
DSS
12V
-12V
R
DS(on)
0.034
0.150
HEXFET
Power MOSFET
6/2/03
IRF7338
Description
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
www.irf.com
1
This Dual SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering technique
Absolute Maximum Ratings
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
SO-8
D1
N-CHANNEL MOSFET
1
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
2
3
4
5
6
7
Symbol
R
θ
JL
R
θ
JA
Parameter
Typ.
–––
–––
Max.
20
62.5
Units
Junction-to-Drain Lead
Junction-to-Ambient
°C/W
Thermal Resistance
PD - 94372C
相關PDF資料 |
PDF描述 |
|---|---|
| IRF7341 | HEXFET Power MOSFET |
| IRF7342D2PBF | FETKY MOSFET & Schottky Diode |
| IRF7342PBF | HEXFET㈢ Power MOSFET (VDSS = -55V , RDS(on) = 0.105ヘ) |
| IRF7350PBF | HEXFET㈢ Power MOSFET |
| IRF7353D2PBF | MOSFET / Schottky Diode (VDSS = 30V , RDS(on) = 0.029ヘ , Schottky VF = 0.52V) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF7338PBF | 功能描述:MOSFET 12V DUAL N- & P- CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7338TRPBF | 功能描述:MOSFET MOSFT DUAL N/PCh 12V 6.3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF733FI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3A I(D) | TO-220AB |
| IRF733R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 4.5A I(D) | TO-220AB |
| IRF734 | 功能描述:MOSFET N-CH 450V 4.9A TO-220AB RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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