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參數資料
| 型號： | IRF7379 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 215K |
| 代理商： | IRF7379 |
D1
N-CHANNEL MOSFET
1
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
2
3
4
5
6
7
HEXFET
Power MOSFET
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
12/8/98
SO-8
l
Generation V Technology
l
Ultra Low On-Resistance
l
Complimentary Half Bridge
l
Surface Mount
l
Fully Avalanche Rated
IRF7379
Description
N-Ch P-Ch
V
DSS
30V
-30V
R
DS(on)
0.045
0.090
www.irf.com
1
Parameter
Units
A
Absolute Maximum Ratings
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Max.
50
Units
R
θ
JA
°C/W
Max.
N-Channel
30
5.8
4.6
46
P-Channel
-30
-4.3
-3.4
-34
V
SD
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
Drain-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
2.5
0.02
± 20
W
W/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
5.0
-5.0
-55 to + 150
PD - 91625
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF7379HR | 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 30V 5.8A/4.3A 8-Pin SOIC |
| IRF7379IPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7379PBF | 功能描述:MOSFET 30V DUAL N / P CH 20V VGS MAX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7379PBF | 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR POWER DISSIPATION:2.5W |
| IRF7379QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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