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參數資料
| 型號： | IRF7403 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件頁數： | 1/9頁 |
| 文件大小： | 116K |
| 代理商： | IRF7403 |
HEXFET
Power MOSFET
PD - 9.1245B
IRF7403
8/25/97
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Generation V Technology
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Ultra Low On-Resistance
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N-Channel Mosfet
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Surface Mount
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Available in Tape & Reel
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Dynamic dv/dt Rating
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Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
PRELIMINARY
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
SO-8
V
DSS
= 30V
R
DS(on)
= 0.022
Parameter
Max.
9.7
8.5
5.4
34
2.5
0.02
±20
5.0
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
10 Sec. Pulsed Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
W
W/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
-55 to + 150
Absolute Maximum Ratings
A
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Typ.
–––
Max.
50
Units
R
θ
JA
°C/W
相關PDF資料 |
PDF描述 |
|---|---|
| IRF7406 | HEXFET POWER MOSFET |
| IRF7416PBF | HEXFET Power MOSFET |
| IRF7425PBF | HEXFET Power MOSFET |
| IRF7425 | HEXFET Power MOSFET |
| IRF744 | HEXFET POWER MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF7403_04 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF7403HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 8.5A 8SOIC - Rail/Tube |
| IRF7403PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 22mOhms 38nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7403TR | 功能描述:MOSFET N-CH 30V 8.5A 8-SOIC RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF7403TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC T/R |
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