欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: IRF7506
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=-30V, Rds(on)=0.27ohm)
中文描述: 功率MOSFET(減振鋼板基本\u003d- 30V的,的Rds(on)\u003d 0.27ohm)
文件頁數: 1/8頁
文件大小: 103K
代理商: IRF7506
V
DSS
= -30V
R
DS(on)
= 0.27
HEXFET
Power MOSFET
PD - 9.1268F
MICRO8
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device
for applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will
allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA
cards.
Absolute Maximum Ratings
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual P-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (<1.1mm)
l
Available in Tape & Reel
l
Fast Switching
Description
Parameter
Max.
-1.7
-1.4
-9.6
1.25
10
± 20
5.0
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
A
W
mW/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
-55 to + 150
8/25/97
IRF7506
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Typ.
–––
Max.
100
Units
R
θ
JA
°C/W
相關PDF資料
PDF描述
IRF7507PBF HEXFET㈢Power MOSFET
IRF7507 Power MOSFET(Vdss=+-20V)
IRF7700 Power MOSFET(Vdss=-20V)
IRF7701 Power MOSFET(Vdss=-12V)
IRF7702 Power MOSFET(Vdss=-12V)
相關代理商/技術參數
參數描述
IRF7506PBF 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 30V 1.7A 8PIN MICRO8 - Rail/Tube
IRF7506TR 功能描述:MOSFET 2P-CH 30V 1.7A MICRO8 RoHS:否 類別:分離式半導體產品 >> FET - 陣列 系列:HEXFET® 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道(雙) FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續漏極(Id) @ 25° C:3A 開態Rds(最大)@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A,10V Id 時的 Vgs(th)(最大):3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
IRF7506TRPBF 功能描述:MOSFET MOSFT DUAL PCh -30V 1.7A Micro 8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7507 制造商:International Rectifier 功能描述:MOSFET DUAL NP LOGIC MICRO-8
IRF7507HR 制造商:International Rectifier 功能描述:HI-REL DISCRETE - Rail/Tube
主站蜘蛛池模板: 利川市| 朝阳县| 阜新市| 琼中| 诸城市| 安顺市| 博湖县| 交口县| 宁化县| 石棉县| 南昌市| 平邑县| 惠州市| 靖安县| 威信县| 灌云县| 英超| 锡林浩特市| 竹北市| 青海省| 永兴县| 聂荣县| 彭阳县| 邯郸县| 九龙坡区| 永宁县| 陆河县| 南充市| 洪泽县| 辽源市| 大关县| 高淳县| 鸡西市| 巩义市| 大关县| 邯郸市| 科技| 肇庆市| 长汀县| 名山县| 互助|