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參數資料
| 型號： | IRF7526D1 |
| 廠商： | International Rectifier |
| 英文描述： | FETKY⑩ MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V) |
| 中文描述： | FETKY⑩MOSFET的 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 120K |
| 代理商： | IRF7526D1 |
IRF7526D1
FETKY
MOSFET & Schottky Diode
TM
Description
l
Co-packaged HEXFET
Power
MOSFET and Schottky Diode
l
P-Channel HEXFET
l
Low V
F
Schottky Rectifier
l
Generation 5 Technology
l
Micro8
TM
Footprint
V
DSS
= -30V
R
DS(on)
= 0.20
Schottky Vf = 0.39V
Micro8
TM
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
I
SD
≤
-1.2A, di/dt
≤
160A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300μs – duty cycle
≤
2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
www.irf.com
5/7/99
Top View
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
1
Absolute Maximum Ratings
Parameter
R
θ
JA
Maximum
100
Units
°C/W
Junction-to-Ambient
Thermal Resistance Ratings
Parameter
Maximum
-2.0
-1.6
-16
1.25
0.8
10
± 20
-5.0
-55 to +150
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
mW/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ -4.5V
Power Dissipation
A
W
The
FETKY
TM
family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8
the smallest footprint available in an SOIC outline. This makes the Micro8
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8
environments such as portable electronics and PCMCIA cards.
TM
package, with half the footprint area of the standard SO-8, provides
TM
an ideal
TM
will allow it to fit easily into extremely thin application
PD -91649C
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相關代理商/技術參數 |
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| IRF7526D1PBF | 功能描述:MOSFET 20V FETKY-30V MOSFET 200mOhms 7.5nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7526D1TR | 功能描述:MOSFET P-CH 30V 2A MICRO8 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:FETKY™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF7526D1TRPBF | 功能描述:MOSFET MOSFT PCh w/Schttky -2A 200mOhm 7.5nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7530 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=20V, Rds(on)=0.030ohm) |
| IRF7530PBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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