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參數資料
| 型號： | IRF7751 |
| 廠商： | International Rectifier |
| 英文描述： | RES 8K-OHM 1% 0.125W 100PPM THICK-FILM SMD-0805 5K/REEL-7IN-PA |
| 中文描述： | 功率MOSFET（30V的減振鋼板基本\u003d-） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 162K |
| 代理商： | IRF7751 |
HEXFET
Power MOSFET
R
DS(on)
max
35m
@V
GS
= -10V
55m
@V
GS
= -4.5V
HEXFET
power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides the de-
signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
IRF7751
Description
l
Ultra Low On-Resistance
l
Dual P-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (< 1.2mm)
l
Available in Tape & Reel
TSSOP-8
Parameter
Max.
-30
-4.5
-3.6
-18
1.0
0.64
0.008
±20
Units
V
V
DS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 70°C
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
W/°C
V
°C
V
GS
T
J,
T
STG
-55 to +150
Parameter
Max.
125
Units
°C/W
R
θ
JA
www.irf.com
Maximum Junction-to-Ambient
Thermal Resistance
Absolute Maximum Ratings
W
1
10/04/2000
PD - 94002
V
DSS
-30V
I
D
-4.5A
-3.8A
4 = G1
3 = S1
2 = S1
1 = D1
1
2
3
4
5
6
7
8
5 = G2
6 = S2
7 = S2
8 = D2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF7751GPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET? Power MOSFET Ultra Low On-Resistance |
| IRF7751GTRPBF | 功能描述:MOSFET MOSFT DUAL PCh -30V 4.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7751PBF | 制造商:International Rectifier 功能描述:MOSFET P-Channel 30V 4.5A TSSOP8 |
| IRF7751TR | 功能描述:MOSFET 2P-CH 30V 4.5A 8-TSSOP RoHS:否 類別:分離式半導體產品 >> FET - 陣列 系列:HEXFET® 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續漏極(Id) @ 25° C:3A 開態Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF7751TRPBF | 功能描述:MOSFET MOSFT DUAL PCh -30V 4.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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