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參數(shù)資料
| 型號(hào)： | IRF830 |
| 廠商： | Transys Electronics Ltd. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE |
| 中文描述： | N溝道增強(qiáng)模式 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | IRF830 |
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF830
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
Fig.8. Typical transconductance
g
fs
= f(I
D
); parameter T
j
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 3 A; V
GS
= 10 V
Fig.10. Gate threshold voltage
V
GS(TO)
= f(T
j
); conditions: I
D
= 0.25 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
VGS, Gate-Source voltage (Volts)
4
6
8
10
0
5
10
15
PHP4N50
ID, Drain current (Amps)
VDS > ID x RDS(on)max
Tj = 25 C
Tj = 150 C
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
0
5
10
15
0
1
2
3
4
5
6
PHP4N50
ID, Drain current (A)
gfs, Transconductance (S)
Tj = 25 C
150 C
VDS > ID x RDS(on)max
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
Normalised RDS(ON) = f(Tj)
2
1
0
a
1
10
100
1000
10
100
1000
PHP4N50
VDS, Drain-Source voltage (Volts)
Junction capacitances (pF)
Ciss
Coss
Crss
March 1999
4
Rev 1.000
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