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參數資料
型號: IRF830AS
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 500V及的Rds(on)最大值\u003d 1.40ohm,身份證\u003d 5.0a中)
文件頁數: 5/7頁
文件大小: 58K
代理商: IRF830AS
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF830
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); parameter V
DS
Fig.14. Typical switching times t
d(on)
, t
r
, t
d(off)
, t
f
= f(R
G
)
Fig.15. Normalised drain-source breakdown voltage
V
(BR)DSS
/V
(BR)DSS 25 C
= f(T
j
)
Fig.16. Source-Drain diode characteristic.
I
F
= f(V
SDS
); parameter T
j
Fig.17. Maximum permissible non-repetitive
avalanche current (I
) versus avalanche time (t
p
);
unclamped inductive load
Fig.18. Maximum permissible repetitive avalanche
current (I
AR
) versus avalanche time (t
p
)
0
10
20
30
40
50
60
70
80
0
5
10
15
PHP4N50
Qg, Gate charge (nC)
VGS, Gate-Source voltage (Volts)
ID = 6 A
Tj = 25 C
250 V
VDD = 400 V
100 V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
PHP4N50
VSDS, Source-Drain voltage (Volts)
IF, Source-Drain diode current (Amps)
VGS = 0 V
150 C
Tj = 25 C
0
10
20
30
40
50
60
1
10
100
1000
tr
PHP4N50
RG, Gate resistance (Ohms)
Switching times (ns)
VDD = 250 V
Tj = 25 C
RD = 39 Ohms
VGS = 10 V
td(on)
td(off)
tf
PHP6N50E
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Non-repetitive Avalanche current, IAS (A)
25 C
VDS
ID
tp
Tj prior to avalanche = 125 C
-100
-50
0
50
100
150
0.85
0.9
0.95
1
1.05
1.1
1.15
Tj, Junction temperature (C)
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
PHP6N50E
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Maximum Repetitive Avalanche Current, IAR (A)
125 C
Tj prior to avalanche = 25 C
March 1999
5
Rev 1.000
相關PDF資料
PDF描述
IRF830 N-Channel Power MOSFETs, 4.5 A, 450V/500V
IRF830 N-CHANNEL ENHANCEMENT MODE
IRF840ASTRL TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB
IRF840ASTRR TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB
IRF840F N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(188.09 k)
相關代理商/技術參數
參數描述
IRF830ASPBF 功能描述:MOSFET N-Chan 500V 5.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF830ASTRL 功能描述:MOSFET N-Chan 500V 5.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF830ASTRLPBF 功能描述:MOSFET N-Chan 500V 5.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF830ASTRR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-263AB
IRF830B 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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