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參數資料
型號: IRF840F
英文描述: N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(188.09 k)
中文描述: ? -通道增強型功率MOS晶體管(188.09十一)
文件頁數: 10/10頁
文件大小: 129K
代理商: IRF840F
IRF840AS/L
10
www.irf.com
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 12/99
D
2
Pak Tape & Reel Information
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORM S TO EIA-418.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L = 16mH
R
G
= 25
, I
AS
= 8.0A. (See Figure 12)
I
SD
8.0A, di/dt
100A/μs, V
DD
V
(BR)DSS
,
T
J
150°C
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes:
Pulse width
300μs; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Uses IRF840A data and test conditions
相關PDF資料
PDF描述
IRF840LC
IRF841F N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(188.09 k)
IRF842FI TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220AB
IRF843FI TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-220AB
IRF840 PowerMOS transistor Avalanche energy rated
相關代理商/技術參數
參數描述
IRF840FI 制造商:STMicroelectronics 功能描述:MOSFET Transistor, N-Channel, TO-220VAR
IRF840FP 制造商:SUNTAC 制造商全稱:SUNTAC 功能描述:POWER MOSFET
IRF840I 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
IRF840L 功能描述:MOSFET N-Chan 500V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF840LC 功能描述:MOSFET N-Chan 500V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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