- 您現在的位置：買賣IC網 > PDF目錄360933 > IRF9130SMD P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P溝道功率MOS場效應管,HI-REL應用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) PDF資料下載
參數資料
| 型號： | IRF9130SMD |
| 英文描述： | P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P溝道功率MOS場效應管,HI-REL應用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) |
| 中文描述： | P溝道功率MOSFET為高可靠性應用（減振鋼板基本：- 100V的，身份證（續）：- 8A型，的Rds（on）：0.35Ω）性（P溝道功率馬鞍山場效應管，高可靠性應用（減振鋼板基本： - 100V的，身份證（續）：- 8A型，的Rds（on）：0.35Ω）） |
| 文件頁數： | 2/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | IRF9130SMD |
IRF9130SMD
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukPrelim. 09/00
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
3
15V
V
GS
= 0
I
D
= 1mA
I
D
= 5A
I
D
= 8A
I
D
= 250
m
A
I
DS
= 5A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= 8A
V
DS
= 0.5BV
DSS
I
D
= 8A
V
DD
= 50V
I
D
= 8A
R
G
= 7.5
W
I
S
= 8A
V
GS
= 0
I
S
= 8A
d
i
/ d
t
￡
100A/
m
s V
DD
￡
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
100
0.1
0.35
0.4
4
2
3
25
250
100
-100
860
350
125
12.5
29
1.0
2
6.3
27
60
140
140
140
8
32
4.7
300
3
8.7
8.7
V
V/°C
W
V
S
(
(
W
)
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
Internal Source Inductance
(from 6mm down source lead to centre of source bond pad)
(from 6mm down drain lead pad to centre of die)
PACKAGE CHARACTERISTICS
相關PDF資料 |
PDF描述 |
|---|---|
| IRF9130 | P-CHANNEL POWER MOSFETS |
| IRF9130 | -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET |
| IRF9130 | TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A) |
| IRF9130SMD | P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
| IRF9130 | P-CHANNEL POWER MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF9130SMD05 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:P-Channel |
| IRF9131 | 制造商:Microsemi Corporation 功能描述:P CHANNEL MOSFET, TO-3, LAW - Bulk |
| IRF9132 | 制造商:Microsemi Corporation 功能描述:P CHANNEL MOSFET, TO-3, LAW - Bulk |
| IRF9133 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRF9140 | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 18A 3-Pin(2+Tab) TO-3 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 18A 2PIN TO-204AA - Bulk 制造商:Microsemi Corporation 功能描述:P CHANNEL MOSFET, TO-3, LAW - Bulk 制造商:International Rectifier 功能描述:MOSFET P TO-3 制造商:International Rectifier 功能描述:MOSFET, P, TO-3 制造商:International Rectifier 功能描述:Single P-Channel 100 V 125 W 60 nC Hexfet Transistors Through Hole - TO-3 制造商:International Rectifier 功能描述:P CH MOSFET, -100V, 18A, TO-204AA; Transistor Polarity:P Channel; Continuous Drain Current Id:-18A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V ;RoHS Compliant: No 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 100V 18A TO-3 |
發布緊急采購，3分鐘左右您將得到回復。