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參數資料
| 型號： | IRF9150 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET |
| 中文描述： | 25 A, 100 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 文件頁數： | 1/7頁 |
| 文件大小： | 57K |
| 代理商： | IRF9150 |
5-20
File Number
2280.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRF9150
-25A, -100V 0.150 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA49230.
Features
-25A, -100V
r
DS(ON)
= 0.150
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Symbol
Packaging
JEDEC TO-204AE
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9150
TO-204AE
IRF9150
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
Data Sheet
February 1999
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