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參數(shù)資料
| 型號： | IRF9Z34S |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d- 60V的，的Rds（on）\u003d 0.14ohm，身份證\u003d- 18A條） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 334K |
| 代理商： | IRF9Z34S |
IRF9Z34S/L
HEXFET
Power MOSFET
PD - 9.913A
l
Advanced Process Technology
l
Surface Mount (IRF9Z34S)
l
Low-profile through-hole (IRF9Z34L)
l
175°C Operating Temperature
l
Fast Switching
l
P- Channel
l
Fully Avalanche Rated
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z34L) is available for low-
profile applications.
Absolute Maximum Ratings
V
DSS
= -60V
R
DS(on)
= 0.14
I
D
= -18A
D2
TO-262
8/25/97
S
D
G
Parameter
Max.
-18
-13
-72
3.7
88
0.59
± 20
370
-18
8.8
-4.5
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Parameter
Typ.
–––
–––
Max.
1.7
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Thermal Resistance
°C/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF9Z34SPBF | 功能描述:MOSFET P-Chan 60V 18 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9Z34STRL | 功能描述:MOSFET P-Chan 60V 18 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9Z34STRLPBF | 功能描述:MOSFET P-Chan 60V 18 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9Z34STRLPBF VIS | 制造商:Vishay Semiconductors 功能描述: |
| IRF9Z34STRR | 功能描述:MOSFET P-Chan 60V 18 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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