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參數資料
| 型號： | IRFB20N50K |
| 廠商： | International Rectifier |
| 英文描述： | SMPS MOSFET |
| 中文描述： | MOSFET的開關電源 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 115K |
| 代理商： | IRFB20N50K |
IRFB20N50K
4/2/02
www.irf.com
1
SMPS MOSFET
HEXFET
Power MOSFET
V
DSS
500V
R
DS(on)
typ.
0.21
I
D
20A
Parameter
Max.
20
12
80
280
2.2
± 30
6.9
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
A
W
W/
°
C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300
°
C
10
N
Absolute Maximum Ratings
TO
-
220AB
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency
Circuits
Benefits
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage
and Current
Low R
DS(on)
Applications
Symbol
E
AS
I
AR
E
AR
Parameter
Typ.
–––
–––
–––
Max.
330
20
28
Units
mJ
A
mJ
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ.
–––
0.50
–––
Max.
0.45
–––
58
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
Thermal Resistance
PD - 94418
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