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參數(shù)資料
| 型號(hào)： | IRFB38N20D |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）最大值\u003d 0.054ohm，身份證\u003d 44A條） |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 133K |
| 代理商： | IRFB38N20D |
Notes
www.irf.com
through
are on page 11
1
12/12/01
IRFB38N20D
IRFS38N20D
IRFSL38N20D
HEXFET
Power MOSFET
SMPS MOSFET
V
DSS
200V
R
DS(on)
max
0.054
I
D
44A
PD - 94358
D
2
Pak
IRFS38N20D
TO-220AB
IRFB38N20D
TO-262
IRFSL38N20D
Parameter
Max.
44
32
180
3.8
320
2.1
± 30
9.5
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
A
= 25
°
C
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw 10 lbf
in (1.1N
m)
A
W
W/
°
C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°
C
Absolute Maximum Ratings
High frequency DC-DC converters
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Applications
Thermal Resistance
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.47
–––
62
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
°
C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFS38N20D | RECT, 1A, 200V, ULTRAFAST, 50NS, SM |
| IRFSL38N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A) |
| IRFS4229PBF | PDP SWITCH |
| IRFS4310 | HEXFET Power MOSFET |
| IRFB4310 | HEXFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFB38N20DPBF | 功能描述:MOSFET MOSFT 200V 44A 54mOhm 60nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB4019PBF | 功能描述:MOSFET MOSFT 150V 17A 95mOhm 13nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB4020PBF | 功能描述:MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB4103PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DIGITAL AUDIO MOSFET |
| IRFB4110GPBF | 功能描述:MOSFET MOSFT 100V 180A 4.5mOhm 150nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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