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參數資料
| 型號： | IRFB4610 |
| 廠商： | International Rectifier |
| 英文描述： | IRFB4610 IRFS4610 IRFSL4610 |
| 中文描述： | IRFB4610 IRFS4610 IRFSL4610 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 381K |
| 代理商： | IRFB4610 |
11/3/04
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
www.irf.com
1
D
2
Pak
IRFS4610
TO-220AB
IRFB4610
TO-262
IRFSL4610
IRFB4610
IRFS4610
IRFSL4610
HEXFET Power MOSFET
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
S
D
G
S
D
G
S
D
G
S
D
G
V
DSS
R
DS(on)
typ.
max.
I
D
100V
11m
14m
73A
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Parameter
Units
A
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
W
W/°C
V
V
GS
dV/dt
T
J
T
STG
V/ns
°C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
mJ
A
mJ
Thermal Resistance
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.77
–––
62
40
Units
Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D
2
Pak
°C/W
370
See Fig. 14, 15, 16a, 16b,
190
1.3
7.6
-55 to + 175
± 20
10lb in (1.1N m)
300
Max.
73
52
290
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PDF描述 |
|---|---|
| IRFSL4610 | IRFB4610 IRFS4610 IRFSL4610 |
| IRFSL17N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A) |
| IRFB17N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A) |
| IRFS17N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A) |
| IRFSL3307 | HEXFET Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFB4610PBF | 功能描述:MOSFET MOSFT 100V 73A 14mOhm 90nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB4615PBF | 功能描述:MOSFET MOSFT 150V 34A 41mOhm 26nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB4620PBF | 功能描述:MOSFET MOSFT 200V 25A 72.5mOhm 25nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB4710 | 制造商:International Rectifier 功能描述:MOSFET Transistor, N-Channel, TO-220AB |
| IRFB4710 | 制造商:International Rectifier 功能描述:MOSFET N TO-220AB |
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