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參數資料
| 型號： | IRFB9N30A |
| 廠商： | International Rectifier |
| 英文描述： | N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場效應管) |
| 中文描述： | N溝道HEXFET功率MOSFET的（不適用溝道的HEXFET功率馬鞍山場效應管） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 137K |
| 代理商： | IRFB9N30A |
IRFB9N30A
HEXFET
Power MOSFET
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
D
G
Parameter
Max.
9.3
5.9
37
96
0.77
± 30
160
9.3
9.6
4.6
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
0.50
–––
Max.
1.3
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
= 300V
R
DS(on)
= 0.45
I
D
= 9.3A
TO-220AB
l
Dynamic dv/dt Rating
l
Repetitive Avalanche Rated
l
Fast Switching
l
Ease of Paraleling
l
Simple Drive Requirements
Description
10/7/98
1
PD- 91832
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFB9N30APBF | 功能描述:MOSFET N-Chan 300V 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB9N60 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A) |
| IRFB9N60A | 功能描述:MOSFET N-Chan 600V 9.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB9N60APBF | 功能描述:MOSFET N-Chan 600V 9.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB9N65 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A) |
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