- 您現在的位置：買賣IC網 > PDF目錄384493 > IRFB9N65A (International Rectifier) Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A) PDF資料下載
參數資料
| 型號： | IRFB9N65A |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d?650V時，RDS（on）的最大值\u003d 0.93ohm，身份證\u003d 8.5A） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 135K |
| 代理商： | IRFB9N65A |
HEXFET
Power MOSFET
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
D
G
Parameter
Max.
9.2
5.8
37
170
1.3
± 30
290
9.2
17
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
= 600V
R
DS(on)
= 0.75
I
D
= 9.2A
l
Dynamic dv/dt Rating
l
Repetitive Avalanche Rated
l
Fast Switching
l
Ease of Paraleling
l
Simple Drive Requirements
Description
10/7/98
1
TO-220AB
IRFB9N60A
PD - 91811
相關PDF資料 |
PDF描述 |
|---|---|
| IRFBA22N50 | 30V N-Channel PowerTrench MOSFET |
| IRFBA22N50A | 30V N-Channel PowerTrench MOSFET |
| IRFBA90N20 | CAP 470PF 200V 20% X7R DIP-2 TUBE-PAK R-MIL-PRF-39014/22 |
| IRFBA90N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A) |
| IRFBC20L | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFB9N65APBF | 功能描述:MOSFET N-Chan 650V 8.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBA1404 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A) |
| IRFBA1404P | 功能描述:MOSFET N-CH 40V 206A SUPER-220 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRFBA1404PPBF | 功能描述:MOSFET MOSFT 40V 206A 3.7mOhm 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBA1405 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A) |
發布緊急采購，3分鐘左右您將得到回復。