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參數資料
| 型號： | IRFBA35N60C |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 35A I(D) | TO-273AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 600V的五（巴西）直| 35A條（丁）|對273AA |
| 文件頁數： | 1/3頁 |
| 文件大小： | 41K |
| 代理商： | IRFBA35N60C |
IRFBA32N50K
6/2/00
www.irf.com
1
PD- 93924
SMPS MOSFET
HEXFET
Power MOSFET
V
DSS
500V
R
DS(on)
0.14
I
D
32A
Parameter
Max.
32
20
128
360
2.9
± 30
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Recommended clip force
A
W
W/
°
C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300
°
C
20
N
Absolute Maximum Ratings
PROVISIONAL
Super
-
220
Telecom and Data-Com off-Line SMPS
UninterruptIble Power Supply
Benefits
Low On-Resistance
High Speed Switching
Low Gate Drive Current Due to Improved
Gate Charge Characteristics
Improved Avalanche Ruggedness and
Dynamic dv/dt, Fully Characterized
Avalanche Voltage and Current
Applications
Symbol
I
S
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 32A, V
GS
= 0V
T
J
= 125
°
C, I
F
= 32A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
650
9.0
1.5
–––
–––
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
S
D
G
Diode Characteristics
32
128
A
Typical SMPS Topologies
Hard Switching Full and Half Bridge Circuits
Hard Switching Single Transistor Circuits
Power Factor Correction Circuits
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