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參數(shù)資料
| 型號： | IRFBL18N50K |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 18A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 18A條（丁）|對263AB |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 115K |
| 代理商： | IRFBL18N50K |
IRFBL10N60A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
2
www.irf.com
Parameter
Min. Typ. Max. Units
7.0
–––
–––
––– 63 I
D
= 11A
–––
–––
14
–––
–––
26
–––
18
–––
–––
40
–––
–––
38
–––
–––
35
–––
–––
1895
–––
–––
254
–––
–––
9.2
–––
–––
2560
–––
–––
67
–––
–––
70
–––
Conditions
V
DS
= 50V, I
D
= 6.6A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Avalanche Characteristics
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
S
nC
V
DS
= 480V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 300V
I
D
= 11A
R
G
= 7.5
R
D
= 27
,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 480V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 480V
pF
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
–––
Max.
454
11
18
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
T
J
= 25°C, I
F
= 11A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
585
3.8
1.5
880
5.8
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
11
44
A
Thermal Resistance
Parameter
Typ.
–––
–––
Max.
0.70
40
Units
°C/W
R
θ
JC
Junction-to-Case
R
θ
JA
Junction-to-Ambient (PCB Mounted,steady-state)
Min. Typ. Max. Units
600
–––
–––
0.69
–––
–––
2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 6.6A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
–––
–––
0.61
4.0
25
250
100
-100
V
V/°C
V
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
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