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參數資料
| 型號： | IRFD214 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=0.45A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 250V，的Rds（on）\u003d 2.0ohm，身份證\u003d 0.45A） |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 497K |
| 代理商： | IRFD214 |
Parameter
Max.
0.45
0.29
3.6
1.0
0.0083
±20
57
0.45
0.10
4.8
-55 to + 150
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10 V
Continuous Drain Current, V
GS
@ 10 V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
°C
300 (1.6mm from case)
IRFD214
HEXFET
Power MOSFET
PD -9.1271
Revision 0
V
DSS
= 250V
R
DS(on)
= 2.0
I
D
= 0.45A
Absolute Maximum Ratings
Thermal Resistance
Parameter
Min.
—
Typ.
—
Max.
120
Units
°C/W
R
θ
JA
Junction-to-Ambient
Dynamic dv/dt Rating
Repetitive Avalanche Rated
For Automatic Insertion
End Stackable
Fast Switching
Ease of paralleling
Simple Drive Requirements
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-insertable case style which can be
stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain
serves as a thermal link to the mounting surface for power dissipation levels up to
1 watt.
Description
HD-1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFD214PBF | 功能描述:MOSFET N-Chan 250V 0.45 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD220 | 功能描述:MOSFET N-Chan 200V 0.8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD220119 | 制造商:Harris Corporation 功能描述: |
| IRFD220PBF | 功能描述:MOSFET N-Chan 200V 0.8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD220R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 800MA I(D) | TO-250VAR |
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